A MODEL STUDY OF SURFACE STATE ON OPTICAL BANDGAP OF SILICON NANOWIRES

Aliyu I. Kabiru, Isah Mustapha, Abbas U. Dallatu, Danlami Abdulhadi

Abstract


A theoretical approach is carried out to study the role of surface state in silicon nanowires. The influences of size and surface passivation on the bandgap energy and photoluminescence spectra of silicon nanowires with diameter between 4 to 12nm are examined. It is observed that visible PL in silicon nanowires is due to quantum confinement and surface passivation. But the energy recombination of electron and holes in the quantum confined nanostructures is responsible for the visible PL. In this work, models from quantum bandgap and photoluminescence intensity are adopted to explain the size dependent surface luminescence. Investigation show that the nanowires of smaller size with surface impurities revealed higher bandgap energy. Oxygenated surface is found to have higher energy than hydrogenated surface. The features of PL spectra of Si nanowires suggest that these models are significant for understanding the mechanism of visible PL from SINWs.  


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